Work

High power AlGaN/GaN heterojunction FETs for base station applications

Year: 2004

Type: conference-paper

Source: Conference digest

DOI: 10.1109/drc.2004.1367769

Authors: Y. Ando, Y. Okamoto, T. Nakayama, T. Inoue, K. Hataya, H. Miyamoto, M. Senda, K. Hirata, M. Kosaki, N. Shibata, M. Kuzuhara

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2154507520

FWCI: 1.786

Cites: 2

Cited by: 1

Related to: 10