Work

Al-doped HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors

Year: 2011

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.3575569

Authors: Yoontae Hwang, Varistha Chobpattana, Jack Y. Zhang, James M. LeBeau, Roman Engel-Herbert, Susanne Stemmer

Institutions: University of California, Santa Barbara, North Carolina State University, Pennsylvania State University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Foundation

OpenAlex ID: W2155037726

FWCI: 4.464

Cites: 17

Cited by: 24

Related to: 10