Work

Microstructural analysis of III–V nitrides grown on 6H–SiC by metal–organic vapour phase epitaxy (MOVPE)

Year: 2000

Type: article

Source: Diamond and Related Materials

DOI: 10.1016/s0925-9635(99)00280-0

Authors: H Lahreche, M Vaille, P Vennéguès, M Laügt, B Beaumont, P Gibart

Institutions: Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2155196329

FWCI:

Cites: 11

Cited by: 5

Related to: 10