Work

Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies

Year: 2003

Type: article

Source: Microelectronics Reliability

DOI: 10.1016/s0026-2714(03)00126-4

Authors: M. Streibl, K. Esmark, A. Sieck, W. Stadler, M. Wendel, J. Szatkowski, H. Goßner

Institution: Infineon Technologies (Germany)

Language: English

Topic: Electrostatic Discharge in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2156190836

FWCI: 0.335

Cites: 17

Cited by: 8

Related to: 10