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First CMOS integration of ultra thin body and BOX (UTB2) structures on bulk direct silicon bonded (DSB) wafer with multi-surface orientations

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Year: 2009
Type: conference-paper
Source: Technical digest - International Electron Devices Meeting/Technical digest
DOI: 10.1109/iedm.2009.5424247
Authors: G. Bidal, F. Boeuf, S. Denorme, C. Laviron, K. Bourdelle, N. Loubet, Y. Campidelli, R. Beneyton, H. Moriceau, F. Fournel, P. Morin, S. Barnola, T. Salvetat, P. Perreau, P. Gouraud, F. Leverd, B. Le-Gratiet, J.L. Huguenin, D. Fleury, K. Kusiaku, A. Cros, C. Leyris, S. Haendler, C. Borowiak, L. Clement, R. Pantel, G. Ghibaudo, T. Skotnicki
Institutions: Institut polytechnique de Grenoble, STMicroelectronics (France), Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire d'Électronique des Technologies de l'Information, Soitec (France)
Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed
OpenAlex ID: W2156227010
FWCI: 0.937
Cites: 3
Cited by: 4
Related to: 10
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