Work

Geometric Component in Constant-Amplitude Charge-Pumping Characteristics of LOCOS- and LDD-MOSFET Devices

Year: 2010

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2010.2098441

Authors: Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumen, Bacharia Nadji, Youcef Kribes

Institutions: Centre de Développement des Technologies Avancées, University of Boumerdes

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2157176014

FWCI:

Cites: 25

Cited by: 9

Related to: 10