Work

Sub-bandgap absorption of gallium nitride determined by Photothermal Deflection Spectroscopy

Year: 1996

Type: article

Abstract: Photothermal Deflection Spectroscopy (PDS) is used to study the sub-bandgap absorption of hexagonal gallium nitride (GaN) in the energy range from 0.6 to 3.8 eV. Auto-, n- and p-doped GaN layers deposited by chemical vapour deposition from organometallic precursors (MOCVD) or electron cyclotron resonance assisted molecular beam epitaxy (ECR-MBE) are measured to investigate the optical band edge, the sub-bandgap absorption and the absorption due to free carriers. PDS is also useful to study the long term and thermal stability of GaN. Changes in sub-bandgap absorption by heating the samples to 600 °C for several hours are presented.

Source: Solid State Communications

DOI: 10.1016/0038-1098(95)00658-3

Authors: O. Ambacher, W. Rieger, P. Ansmann, H. Angerer, T.D. Moustakas, M. Stutzmann

Institutions: Technical University of Munich, Boston University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,960

OpenAlex ID: W2157778377

FWCI: 3.525

Cites: 14

Cited by: 126

Related to: 10