Work

Phonon Replica Dynamics in High Quality GaN Epilayers and AlGaN/GaN Quantum Wells

Year: 2001

Type: article

Abstract: We present an experimental study of the exciton and phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells (QW) by means of picosecond time-resolved photoluminescence (PL) measurements. A non-exponential decay is observed both at the zero phonon line (ZPL) and at the n = 1 LO replica. Time-resolved spectra unambiguously assign the replica to the free exciton A recombination. Optical migration effects are detected both in the epilayer and the QWs samples and disappear as the temperature increases up to 60–90 K. Even though the sample quality is comparable to state-of-the-art samples, localization effects dominate the exciton dynamics at low temperature in the studied GaN based strucures.

Source: physica status solidi (a)

DOI: 10.1002/1521-396x(200101)183:1<129::aid-pssa129>3.0.co;2-t

Authors: D. Alderighi, A. Vinattieri, F. Bogani, M. Colocci, S. Gottardo, N. Grandjean, J. Massies

Institutions: Istituto Nazionale per la Fisica della Materia, University of Florence, Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2157896876

FWCI: 0.753

Cites: 5

Cited by: 8

Related to: 10