Work

Device degradation of n-channel poly-Si TFTs due to high-field, hot-carrier and radiation stressing

Year: 2002

Type: conference-paper

Source: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

DOI: 10.1109/ipfa.2001.941498

Authors: A. Khamesra, R. Lal, J. Vasi, K.P. Kumar, J.K.O. Sin

Institutions: Indian Institute of Technology Bombay, Hong Kong University of Science and Technology

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2158249188

FWCI: 1.878

Cites: 8

Cited by: 8

Related to: 10