Work

50-nm fully depleted SOI CMOS technology with HfO/sub 2/ gate dielectric and TiN gate

Year: 2003

Type: article

Source: IEEE Transactions on Nanotechnology

DOI: 10.1109/tnano.2003.820502

Authors: A. Vandooren, S. Egley, M. Zavala, T. Stephens, L. Mathew, M. Rossow, A. Thean, A. Barr, Z. Shi, T. White, D. Pham, J. Conner, L. Prabhu, D. Triyoso, J. Schaeffer, D. Roan, Bich-Yen Nguyen, M. Orlowski, J. Mogab

Institution: Motorola (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2158552116

FWCI: 2.979

Cites: 12

Cited by: 15

Related to: 10