Work

Simple models for InGaN alloys

Year: 2011

Type: article

Source: physica status solidi (a)

DOI: 10.1002/pssa.201100147

Authors: Fathi Elfituri, Ben Hourahine

Institution: University of Strathclyde

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2159205409

FWCI:

Cites: 22

Cited by: 2

Related to: 10