Work

Analysis of electron traps in SiO2/IGZO interface by cyclic capacitance-voltage method

Year: 2012

Type: conference-paper

Source: IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

DOI: 10.1109/imfedk.2012.6218580

Authors: Yoshihiro Ueoka, Mami Fujii, Haruka Yamazaki, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka

Institution: Nara Institute of Science and Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Asian Office of Aerospace Research and Development

OpenAlex ID: W2159286407

FWCI: 1.216

Cites: 5

Cited by: 3

Related to: 10