Work

Impact of pad and gate parasitics on small-signal and noise modeling of 0.35 μm gate length MOS transistors

Year: 2002

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/16.998597

Authors: P. Sakalas, H.G. Zirath, A. Litwin, M. Schroter, A. Matulionis

Institutions: Ericsson (Sweden), Chalmers University of Technology, Technische Universität Dresden

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2159404992

FWCI: 2.063

Cites: 19

Cited by: 24

Related to: 10