Work

Electrical breakdown phenomena in gold-doped silicon

Year: 1962

Type: article

Source: IRE Transactions on Electron Devices

DOI: 10.1109/t-ed.1962.15066

Authors: J.F. Gibbons, V.K.G. Reddi

Institution: Stanford University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2159477111

FWCI: 0.827

Cites:

Cited by: 2

Related to: 10