Work

Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy

Year: 2002

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2002.1004234

Authors: M.W. Dashiell, J. Kolodzey, P. Crozat, F. Aniel, J.M. Lourtioz

Institutions: University of Delaware, Université Paris-Sud

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2160090100

FWCI: 1.751

Cites: 16

Cited by: 26

Related to: 10