Work

240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes

Year: 2010

Type: article

Source: IEEE Photonics Technology Letters

DOI: 10.1109/lpt.2010.2057503

Authors: M. Lahrichi, G. Glastre, E. Derouin, D. Carpentier, N. Lagay, J. Decobert, M. Achouche

Institutions: III V Lab, Alcatel-Lucent (France)

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2161248616

FWCI: 2.206

Cites: 14

Cited by: 38

Related to: 10