Year: 2013
Type: conference-paper
Abstract: The InP Membrane on Silicon (IMOS) generic technology promises high index contrast photonic integrated circuits. To make this a reality fabrication of an electrically pumped twin-guide laser is pursued. In this paper, one of the bottle-necks for the processing is discussed, the planarization step and subsequent etch-back. Benzocyclobutene (BCB) is used to planarize SOA structures before contacting. Complete curing of BCB at 280oC creates uniformity issues during etch-back. To mitigate this, a partial cure at 180oC before the etch-back and a complete cure afterwards is performed. Experiments show repeatability and reproducibility. Good uniformity after etch-back is found.
Source: TU/e Research Portal
Authors: Bhat, S.P., Fernandez, L., Tol, van der, J.J.G.M., Roelkens, G., Ambrosius, H.P.M.M., Smit, M.K., Leijtens, X.J.M., Pustakhod, D.
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2162811095