Electrical Behavior of Phase-Change Memory Cells Based on GeTe
Year: 2010
Type: article
Source: IEEE Electron Device Letters
Authors: Luca Perniola, Veronique Sousa, Andrea Fantini, Edrisse Arbaoui, Audrey Bastard, Marilyn Armand, Alain Fargeix, Carine Jahan, Jean-Francois Nodin, Alain Persico, Denis Blachier, Alain Toffoli, Sebastien Loubriat, Emanuel Gourvest, Giovanni Betti Beneventi, Helene Feldis, Sylvain Maitrejean, Sandrine Lhostis, Anne Roule, Olga Cueto, Gilles Reimbold, Ludovic Poupinet, Thierry Billon, Barbara De Salvo, Daniel Bensahel, Pascale Mazoyer, Roberto Annunziata, Paola Zuliani, Fabien Boulanger
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2162885403