Year: 2002
Type: article
Abstract: We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be ∼104 times larger than expected from downscaling a conventional diode. These observations are explained by a model, which predicts a narrower barrier for small diodes and, therefore, a greatly increased contribution of tunneling to the electrical transport.
Source: Applied Physics Letters
DOI: 10.1063/1.1467980
Authors: G. D. J. Smit, S. Rogge, T. M. Klapwijk
Institution: Delft University of Technology
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2165906348