Work

Removal of End-of-Range Ion Implantation Defects in Silicon by Near Noble and Refractory Silicide Formation

Year: 1989

Type: article

Source: MRS Proceedings

DOI: 10.1557/proc-147-33

Authors: W. Lur, J. Y. Cheng, L. J. Chen

Institution: National Tsing Hua University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Council

OpenAlex ID: W2166971949

FWCI: 0.568

Cites: 13

Cited by: 3

Related to: 10