Work

Nature of traps in gate silicon oxynitride of MOS devices

Year: 2003

Type: conference-paper

Source: IEEE Hong Kong Electron Devices Meeting

DOI: 10.1109/hkedm.1999.836408

Authors: Yu.N. Morokov, V.A. Gritsenko, Yu.N. Novikov, J.B. Xu, L.W.M. Lau, R.W.M. Kwok

Institutions: Federal Research Center for Information and Computational Technologies, Institute of Semiconductor Physics, Chinese University of Hong Kong

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2168078698

FWCI: 0.899

Cites: 5

Cited by: 2

Related to: 10