High-transconductance delta-doped InAs/AlSb HFETs with ultrathin silicon-doped InAs quantum well donor layer
Year: 1998
Type: article
Source: IEEE Electron Device Letters
DOI: 10.1109/55.661172
Authors: C.R. Bolognesi, M.W. Dvorak, D.H. Chow
Institutions: Simon Fraser University, HRL Laboratories (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2169929601