Extremely low surface recombination velocities on low‐resistivityn‐type andp‐type crystalline silicon using dynamically deposited remote plasma silicon nitride films
Year: 2012
Type: article
DOI: 10.1002/pip.2320
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2170485545
