High Voltage Switching P-channel Structure for Cmos Architectures
Year: 1988
Type: article
Abstract: An analysis of a P-ch High Voltage structure fully compatible with all CMOS architectures is presented. It points out the critical role played by drain extension layer on electrical device performance, and by the field thick oxide periphery on the device reliability. These results are useful in designing HV process compatible devices in advanced CMOS technology.
Source: Le Journal de Physique Colloques
Authors: C. MORI, G. CRISENZA, P. PICCO
Language: French
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2170663258