Work

1.57 mu m strained-layer quantum-well GaInAlAs ridge-waveguide laser diodes with high temperature (130 degrees C) and ultrahigh-speed (17 GHz) performance

Year: 1993

Type: article

Source: IEEE Photonics Technology Letters

DOI: 10.1109/68.219680

Authors: B. Stegmuller, B. Borchert, R. Gessner

Institution: Siemens (Germany)

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2170970795

FWCI: 3.363

Cites: 8

Cited by: 32

Related to: 10