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GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror

Year: 2006

Type: article

Source: IEEE Photonics Technology Letters

DOI: 10.1109/lpt.2006.871136

Authors: Y.J. Lee, J.M. Hwang, T.C. Hsu, M.H. Hsieh, M.J. Jou, B.J. Lee, T.C. Lu, H.C. Kuo, S.C. Wang

Institutions: National Yang Ming Chiao Tung University, Epistar (Taiwan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2171528232

FWCI: 1.47

Cites: 12

Cited by: 14

Related to: 10