Work

Effect of post-growth annealing on the structural, optical and electrical properties of V 2 O 5 nanorods and its fabrication, characterization of V 2 O 5 /p-Si junction diode

Year: 2015

Type: article

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2015.08.020

Authors: N. Senthil kumar, M. Sethu Raman, J. Chandrasekaran, R. Priya, Murthy Chavali, R. Suresh

Institutions: Ramakrishna Mission Vidyalaya, Vignan's Foundation for Science, Technology & Research

Language: English

Topic: Transition Metal Oxide Nanomaterials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2180053331

FWCI: 1.618

Cites: 40

Cited by: 86

Related to: 10