Work

Simple method for SiC nanowires fabrication

Year: 2011

Type: article

Abstract: In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source materials. SiCNWs have been synthesized during holding time less than 60-80 min at 1450-1500 °C by using a simple and low-cost method in an industrial furnace with a resistant heater.

Source: Semiconductor Physics Quantum Electronics & Optoelectronics

DOI: 10.15407/spqeo14.01.007

Author: V. S Kiselov

Language: English

Topic: Nanowire Synthesis and Applications

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W2183144147

FWCI:

Cites: 12

Cited by:

Related to: 10