Electrical and optical properties of single As-doped ZnO nanowire field effect transistors
Year: 2009
Type: article
Abstract: ZnO nanowires with the average diameter of 20 nm and the length of longer than 10 μm were synthesized on GaAs substrate by chemical vapor deposition（CVD）. As-doped ZnO nanowires were obtained by annealing the samples at 600 ℃ for 30 min in oxygen. Single ZnO nanowire field effect transistors（FET） were fabricated by electron beam exposure and magnetron sputtering deposition and Ti/Au deposited as ohmic-contact electrodes. Based on the electrical properties of the single ZnO nanowire FET before and after annealing, we verified that p-type ZnO nanowire can be obtained by As doping effectively. The parameters of the single As doped ZnO nanowire FET were as follows: the transconductance was 35 nA/V, the hole density was 1.4×1018 cm-3, and the mobility was 6.0 cm2/V·s. We also obtained the photoluminescence spectrum of single As-doped ZnO nanowire: strong ultraviolet light at 383 nm, weaker yellow-green light, and red light due to the existence of AsZn-2VZn shallow acceptors.
Source: Acta Physica Sinica
DOI: 10.7498/aps.58.4156
Authors: Zhang Jun-Yan, Deng Tian-Song, Shen Xin, Zhu Kong-Tao, Zhang Qi-Feng, Wu Jin-Lei, 北京大学电子学系，纳米器件物理与化学教育部重点实验室，北京 100871
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2193774005