Work

Highly Mismatched, Dislocation‐Free SiGe/Si Heterostructures

Year: 2015

Type: article

Source: Advanced Materials

DOI: 10.1002/adma.201504029

Authors: Fabio Isa, Marco Salvalaglio, Yadira Arroyo Rojas Dasilva, Mojmír Meduňa, Michael Barget, Arik Jung, Thomas Kreiliger, Giovanni Isella, Rolf Erni, Fabio Pezzoli, Emiliano Bonera, Philippe Niedermann, Pierangelo Gröning, Francesco Montalenti, Hans von Känel

Institutions: ETH Zurich, Laboratory for Solid State Physics, University of Milano-Bicocca, Empa, Masaryk University, Central European Institute of Technology – Masaryk University, Politecnico di Milano, Swiss Center for Electronics and Microtechnology (Switzerland)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, Central European Institute of Technology

OpenAlex ID: W2195246014

FWCI: 2.562

Cites: 24

Cited by: 44

Related to: 10