Work

Lifetime tests of 600-V GaN-on-Si power switches and HEMTs

Year: 2015

Type: article

Source: Microelectronics Reliability

DOI: 10.1016/j.microrel.2015.12.016

Authors: K.V. Smith, J. Haller, J. Guerrero, R.P. Smith, R. Lal, Y.-F. Wu

Institution: Transphorm (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W2201078567

FWCI: 0.847

Cites: 15

Cited by: 18

Related to: 10