Year: 1996
Type: article
Abstract: A new low temperature processing method for preparation of SrBi2Ta2O9 thin films is proposed. These thin films were prepared on Pt/Ta/ SiO2/Si substrates by a sol-gel method, and their structural and electrical properties were investigated. Films were annealed before and after the top Pt electrode deposition. The 1st annealing was performed in a 760 Torr oxygen atmosphere at 600° C for 30 min, and the 2nd annealing was performed in a 5 Torr oxygen atmosphere at 600° C for 30 min. The films were well crystallized and fine grained after the 2nd annealing. The electrical properties of the 200-nm-thick film obtained using this new processing method, i.e., the remanent polarization (P r), coercive field (E c), and leakage current density (I L), were as follows: P r=8.5 µ C/cm2, E c=30 kV/cm, and I L=1×10-7 A/cm2 (at 150 kV/cm). This new processing method is very attractive for highly integrated ferroelectric nonvolatile memory applications.
DOI: 10.1143/jjap.35.4925
Authors: Yasuyuki Ito, Maho Ushikubo, Seiichi Yokoyama, Hironori Matsunaga, Tsutomu Atsuki, Tadashi Yonezawa, Katsumi Ogi
Institutions: Sharp Corporation (Japan), Mitsubishi Materials (Japan)
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2201300091