Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting $I_{{\scriptstyle {\rm ON}}}=482~\mu{\rm A}/\mu{\rm m}$ at $I_{{\scriptstyle {\rm OFF}}}=100~{\rm nA}/\mu{\rm m}$ and $V_{\rm DD}=0.5~{\rm V}$
Year: 2014
Type: article
Source: IEEE Electron Device Letters
Institution: University of California, Santa Barbara
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2206861420
