Amorphous/Crystalline Silicon Heterojunction Solar Cells under Intensive Illumination
Year: 2010
Type: article
Abstract: We study amorphous/crystalline silicon heterojunction (HJ) solar cells under concentrated light up to 50 suns. Cell open-circuit voltage increases logarithmically with light intensity and reaches to 760 mV at 48 suns. The change of cell efficiency with light intensity under intense illumination is similar to that of other types of crystalline Si solar cells. Si HJ cell efficiency peaks around 10 suns at 19.6%, an 11% increase relative to that at one sun. The decrease in cell efficiency at light intensities higher than 10 suns is mainly due to a decrease in fill factor (FF). The decrease in FF at high light intensity is attributed to the cell bulk resistance and the type of HJ emitter used. FF degrades more in the n-type Si-based cell with an amorphous p-layer emitter than in the p-type Si-based cell with an amorphous n-layer emitter. With optimized emitters and wafer bulk resistance, Si HJ solar cell performance under concentrated illumination could further increase.
Source: EU PVSEC
Authors: Wang, Q., Page, M.R., Iwaniczko, E., Xu, Y.-Q., Roybal, L., Duda, A., Hasoon, F., Ward, S., Wang, D., Yu, P.R.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2209237648