Work

non-polar a-plane GaN growth on r-plane sapphire substrate by MOCVD

Year: 2010

Type: article

Source: 한국진공학회 학술발표회초록집

Authors: Ji-Su Son, Kwang‐Hyun Baek, Ji Hoon Kim, Hooyoung Song, Tae-Geun Kim, Sungmin Hwang

Language: Korean

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2217551663

FWCI:

Cites:

Cited by: 1

Related to: 10