Work

The effect of misorientation-angle dependence of p-GaN layers grown on r-plane sapphire substrates

Year: 2010

Type: article

Source: 한국진공학회 학술발표회초록집

Authors: 손지수, 김재범, 서용곤, 백광현, 김태근, 황성민

Language: Korean

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2220209364

FWCI:

Cites:

Cited by: 1

Related to: 10