Work

SiO2/4H-SiC interface states reduction by POCl3 post-oxidation annealing

Year: 2015

Type: conference-paper

Source: CAS proceedings

DOI: 10.1109/smicnd.2015.7355225

Authors: Razvan Pascu, Florea Craciunoiu, Mihaela Kusko, Mihai Mihaila, Gheorghe Pristavu, Marian Badila, Gheorghe Brezeanu

Institutions: National Institute for Research and Development in Microtechnologies, Universitatea Națională de Știință și Tehnologie Politehnica București

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2220257596

FWCI: 1.247

Cites: 22

Cited by: 6

Related to: 10