Work

Yellow–red emission from (Ga,In)N heterostructures

Year: 2015

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/0022-3727/48/40/403001

Authors: B Damilano, B Gil

Institutions: Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Laboratoire Charles Coulomb, Université Montpellier 2

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Agence Nationale de la Recherche

Award: Réseau national sur GaN

OpenAlex ID: W2227773271

FWCI: 4.783

Cites: 228

Cited by: 111

Related to: 10