Year: 2015
Type: conference-paper
Abstract: The X-ray radiation response and radiation damage of CdZnTe (CZT) detector were studied in this paper. After rapid temperature annealing, the linearity of I-V curve was much better than before. Photo current of Au/CZT planar detector increased linearly with the X-ray intensity. An inflection point around 10- 30 V was observed for different X-ray intensity. Below the inflection points, with the increase of applied voltage, photon current increased linearly, while the current still increased after the inflection point likely due to the illumination-related impact ionization effect. In addition, under exposure in strong X-ray intensity, the photo current remains unchanged before the inflection point while it changes significantly with after the inflection point. KEYWOEDS: CdZnTe; radiation response; radiation damage;
Authors: X.Y. Dai, H. Meng, Y.L. Zhang, J. Tao, R. Xu, J.J. Zhang, J. Huang, L. Wang, K. Tang, J.H. Min, L.J. Wang
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Awards: G1349015087, G2249355694, G5034291767
OpenAlex ID: W2239006307