Work

Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces

Year: 2015

Type: article

Abstract: Electrical properties of the gate oxides thermally grown in N2O on n-type and p-type 4H-SiC have been compared using conventional MOS structure and inversion-channel MOS structure, respectively. Sufficient difference in the electrical properties of the gate oxides grown on n-type and p-type 4H-SiC was revealed. We conclude that the gate oxide process optimisation using inversion-channel MOS devices is superior as compared to the conventional MOS structure.

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.821-823.480

Authors: A.I. Mikhaylov, Alexey V. Afanasyev, V.V. Luchinin, Sergey A. Reshanov, Adolf Schöner, Lars Knoll, Renato Amaral Minamisawa, Giovanni Alfieri, Holger Bartolf

Institutions: Saint Petersburg State Electrotechnical University, Ascatron (Sweden), ABB (Switzerland)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W2240904546

FWCI: 0.311

Cites: 3

Cited by: 3

Related to: 10