Year: 1993
Type: conference-abstract
Abstract: Investigations were made on band-edge-region photoluminescence and the electric resistivity of CuGaS2 epitaxial films on GaAs and GaP substrates, which were prepared by vapor phase epitaxy using metal chlorides and H2S gas. The similar temperature dependence was observed on the resistivity and the intensity of 2.40 eV emission, giving nearly the same activation energy of about 0.05 eV. This value suggests the existence of an acceptor shallower than the acceptor of effective mass approximation. A proposed candidate of this shallow acceptor is an interstitial chlorine atom coming from source materials.
Authors: Makoto Morohashi, Yoshihide Ando, Nozomu Tsuboi, Tomoaki Terasako, Seishi Iida, Shoichi Okamoto
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2247543767