Work

Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature

Year: 2015

Type: article

Abstract: The aim of this study consists in comparing effects of temperature on various Silicon Carbide power devices. Static and dynamic electrical characteristics have been measured for temperatures from 80K to 525K.

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.821-823.814

Authors: Thibaut Chailloux, Cyril Calvez, Dominique Tournier, Dominique Planson

Institutions: Laboratoire Ampère, Institut National des Sciences Appliquées de Lyon

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W2248300046

FWCI: 0.466

Cites: 9

Cited by: 6

Related to: 10