Work

Amorphous ZnO based resistive random access memory

Year: 2016

Type: article

Source: RSC Advances

DOI: 10.1039/c5ra22728c

Authors: Yong Huang, Zihan Shen, Ye Wu, Xiaoqiu Wang, Shufang Zhang, Xiaoqin Shi, Haibo Zeng

Institutions: Nanjing University of Science and Technology, Jinling Institute of Technology

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: China Postdoctoral Science Foundation

Award: G6528525072

OpenAlex ID: W2255259676

FWCI: 7.825

Cites: 15

Cited by: 145

Related to: 10