Work

Properties of Phosphorus‐Doped Silicon‐Rich Amorphous Silicon Carbide Film Prepared by a Solution Process

Year: 2016

Type: article

Source: Journal of the American Ceramic Society

DOI: 10.1111/jace.14138

Authors: Takashi Masuda, Akira Iwasaka, Hideyuki Takagishi, Tatsuya Shimoda

Institutions: Japan Advanced Institute of Science and Technology, Fukushima University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Izumi Foundation, Izumi Science and Technology Foundation

OpenAlex ID: W2269833249

FWCI: 0.785

Cites: 40

Cited by: 7

Related to: 10