Work

Integration of GaN Crystals on Micropatterned Si(0 0 1) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Year: 2015

Type: article

Source: Crystal Growth & Design

DOI: 10.1021/acs.cgd.5b00727

Authors: Fabio Isa, Caroline Chèze, Marcin Siekacz, Christian Hauswald, Jonas Lähnemann, Sergio Fernández-Garrido, Thomas Kreiliger, Manfred Ramsteiner, Yadira Arroyo Rojas Dasilva, Oliver Brandt, Giovanni Isella, Rolf Erni, Raffaella Calarco, Henning Riechert, Leo Miglio

Institutions: ETH Zurich, Laboratory for Solid State Physics, Politecnico di Milano, Paul Drude Institute for Solid State Electronics, Institute of High Pressure Physics, TopGaN (Poland), Polish Academy of Sciences, Swiss Federal Laboratories for Materials Science and Technology, University of Milano-Bicocca

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, Eidgenössische Technische Hochschule Zürich, Cordis

Awards: Novel Integrated Pixel X-ray Detectors 'NOVIPIX', G2145752576, G3433169948

OpenAlex ID: W2287269573

FWCI: 1.459

Cites: 54

Cited by: 11

Related to: 10