Work

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

Year: 2016

Type: article

Abstract: Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 107 s−1. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.

Source: Applied Physics Letters

DOI: 10.1063/1.4943249

Authors: K. M. Niang, P. M. C. Barquinha, R. F. P. Martins, B. Cobb, M. J. Powell, A. J. Flewitt

Institutions: University of Cambridge, Uninova, Centro de Investigação em Materiais, Holst Centre (Netherlands)

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: Seventh Framework Programme

Award: G3844589448