Work

High-Current Tunneling FETs With (110) Orientation and a Channel Heterojunction

Year: 2016

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2016.2523269

Authors: Pengyu Long, Jun Z. Huang, Michael Povolotskyi, Gerhard Klimeck, Mark J. W. Rodwell

Institutions: Purdue University West Lafayette, University of California, Santa Barbara

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Intel Corporation, Office of Advanced Cyberinfrastructure

Awards: G1390349710, NEB: Superlattice-FETs, Gamma-L-FETs, and Tunnel-FETs: Materials, Devices and Circuits for Fast Ultra-Lower-Power ICs

OpenAlex ID: W2299733237

FWCI: 1.831

Cites: 29

Cited by: 24

Related to: 10