Silicon germanium on graded buffer as a new platform for optical interconnects on silicon
Year: 2016
Type: conference-paper
Abstract: We experimentally and theoretically investigate the use of silicon germanium (SiGe) on silicon substrate as a new platform for optical interconnects. The system composed of Germanium (Ge) rich Si1-xGex guiding layer on a graded SiGe layer is showed to be suitable for the realization of all main building blocks of passive optical circuitry. We show experimentally at a wavelength of 1550nm that sharp 12μm radius bends can be obtained by light confinement tuning. Mach-Zehnder interferometer with more than 10 dB extinction ratio is also demonstrated. Moreover, Ge-rich Si1-xGex based passive components are very interesting for their native integration with Ge-rich active optical devices. Hence, by using this new platform for optical integrated circuits, lattice mismatch between silicon and germanium is no longer a major constraint for the integration of Ge-rich active photonic components on silicon.
DOI: 10.1117/12.2208661
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2301366337