Work

Effects of Rapid Thermal Anneals on Boron Implanted GaAs

Year: 1988

Type: article

Source: MRS Proceedings

DOI: 10.1557/proc-144-471

Authors: R. C. Bowman, P. M. Adams, M. H. Herman, S. E. Buttrill

Institution: The Aerospace Corporation

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2329397136

FWCI: 0.225

Cites: 13

Cited by: 1

Related to: 10