Work

Three-Dimensional Dislocation Density Analysis of Bulk Semiconductor Single Crystal During CZ Growth Process.

Year: 2002

Type: article

Abstract: A three-dimensional finite element computer program is developed for calculating dislocation density in bulk single crystal during Czochralski (CZ) growth process. In this program, crystal anisotropy in elastic constants and slip systems is taken into account. The Hassen-Sumino model is used as a uni-axial creep constitutive equation, which is extended to multi-axial stress state by using the theory of crystal plasticity. Dislocation density analyses of a silicon bulk single crystal are performed in the cases of both <001> and <111> pulling directions by use of this program. It is found that the dislocation density increases very rapidly from initial state to steady state. Significant differences are found between both pulling directions in distribution pattern of stress and dislocation density.

Source: TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A

DOI: 10.1299/kikaia.68.21

Authors: Noriyuki MIYAZAKI, Masatsugu SAKAGUCHI

Language: English

Topic: Solidification and crystal growth phenomena

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W2331350344

FWCI:

Cites:

Cited by: 4

Related to: 10